151618 Silicon germanium Molecular Beam Epitaxy

Description:

The SiGe molecular beam epitaxy (MBE) reactor will be purchased for the group Advance Nanomaterials & Devices (AND). The purpose for this MBE is to grow extremely pure SiGe nanostructures with a direct bandgap to enable light emission, which is normally not possible from these materials. In order to exchange materials between two reactor systems, the loadlock of the SiGe MBE has to be coupled to an existing glovebox of a metal organic vapor phase reactor, enabling contamination and oxidation free transport. The combination of ultra-pure MBE grown materials combined with the flexibility to inter exchange materials with a MOVPE will hopefully lead to nanostructures with strongly improved properties.
 

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Type:

Sealed without Preselection

Offer phase:

11 Jun 2020 14:00 — 28 Jul 2020 14:00